CSD16403Q5A, VSONP-8, TI 25V N-Channel Power MOSFET Wholesale

• ✓ Large available stock for CSD16403Q5A
• ✓ Competitive wholesale pricing for volume orders
• ✓ 25 V N-channel NexFET™ power MOSFET technology
• ✓ Very low RDS(on) for reduced conduction losses
• ✓ Low Qg and Qgd for efficient switching
• ✓ Low thermal resistance for power-conversion applications
• ✓ Support for bulk purchasing and production requirements
• ✓ Pre-shipment inspection and order coordination support

The CSD16403Q5A is a 25-V N-channel NexFET™ power MOSFET from Texas Instruments. Designed as a single discrete MOSFET, it is optimized to minimize losses in power-conversion applications, particularly synchronous buck converters and control-FET circuits.

The device provides a maximum RDS(on) of 2.8 mΩ at VGS = 10 V and 3.7 mΩ at VGS = 4.5 V. The corresponding typical values are 2.2 mΩ and 2.9 mΩ, helping reduce conduction losses when the MOSFET is operated under appropriate gate-drive conditions.

With a typical total gate charge of 13.3 nC, including 3.5 nC of gate-drain charge and 5.5 nC of gate-source charge, the CSD16403Q5A provides a balance between low conduction loss and switching performance. The MOSFET is also logic-level compatible.

The device supports a 25-V drain-to-source voltage rating and is avalanche rated. TI specifies a continuous drain current of 100 A under the stated silicon-limited and package-limited conditions at TC = 25°C. Actual usable current in an end application depends on thermal design, PCB construction and operating conditions.

The VSONP (DQJ) package uses a 5 mm × 6 mm class SON construction with low thermal resistance. This package is intended to improve electrical and thermal performance while maintaining a compact footprint for high-current power-conversion designs.

• ✓ 25 V N-channel NexFET™ power MOSFET
• ✓ Single MOSFET configuration
• ✓ 2.8 mΩ maximum RDS(on) at VGS = 10 V
• ✓ 3.7 mΩ maximum RDS(on) at VGS = 4.5 V
• ✓ 2.2 mΩ typical RDS(on) at VGS = 10 V
• ✓ 2.9 mΩ typical RDS(on) at VGS = 4.5 V
• ✓ 100 A continuous drain current under TI specified conditions
• ✓ 13.3 nC typical total gate charge
• ✓ 3.5 nC typical gate-drain charge
• ✓ 5.5 nC typical gate-source charge
• ✓ Logic-level gate drive
• ✓ Avalanche rated
• ✓ Ultra-low conduction resistance
• ✓ Ultra-low gate charge for switching efficiency
• ✓ Low thermal resistance
• ✓ Pb-free terminal plating
• ✓ RoHS compliant
• ✓ Halogen free
• ✓ VSONP (DQJ) 8-pin SON package
• ✓ 4.9 mm × 6.0 mm package footprint
• ✓ Operating temperature range of -55°C to +150°C
• ✓ Optimized for control FET applications
• ✓ Suitable for point-of-load synchronous buck converters
• ✓ Suitable for networking, telecom and computing power systems