CSD17571Q2, WSON-6, TI N-Channel Power MOSFET Wholesale

• ✓ Large available stock for CSD17571Q2
• ✓ Competitive wholesale pricing for volume orders
• ✓ Low RDS(on) for reduced conduction losses
• ✓ Low Qg and Qgd for efficient switching
• ✓ Compact 2 mm × 2 mm WSON package
• ✓ Suitable for control FET and power-management applications
• ✓ Support for bulk purchasing and production requirements
• ✓ Pre-shipment inspection and order coordination support

The CSD17571Q2 is a 30 V N-channel NexFET™ power MOSFET from Texas Instruments. Designed as a single MOSFET in a compact 2 mm × 2 mm SON package, it is optimized to reduce conduction and switching losses in power conversion and load-management applications.

The device provides a maximum RDS(on) of 24 mΩ at VGS = 10 V and 29 mΩ at VGS = 4.5 V. This low on-state resistance helps minimize conduction losses when the MOSFET is used as a control or switching device in power-management circuits.

With a typical total gate charge of 2.4 nC and gate-drain charge of 0.6 nC, the CSD17571Q2 is designed for low switching losses and fast power-stage operation. The device also supports logic-level drive, making it suitable for applications driven by common low-voltage gate-control circuitry.

The CSD17571Q2 has a silicon-limited continuous drain-current rating of 7.6 A at TC = 25°C, while the package current limit is 22 A. Its pulsed drain current is rated at 39 A at TA = 25°C. The MOSFET is also avalanche rated for additional robustness during switching transients.

The low-profile WSON package combines a small PCB footprint with low thermal resistance, allowing efficient thermal management within compact power-conversion designs. The device operates over a junction-temperature range of -55°C to +150°C.

• ✓ 30 V N-channel NexFET™ power MOSFET
• ✓ Single MOSFET configuration
• ✓ 24 mΩ maximum RDS(on) at VGS = 10 V
• ✓ 29 mΩ maximum RDS(on) at VGS = 4.5 V
• ✓ 20 mΩ typical RDS(on) at VGS = 10 V
• ✓ 24 mΩ typical RDS(on) at VGS = 4.5 V
• ✓ 7.6 A silicon-limited continuous drain current at TC = 25°C
• ✓ 22 A package-limited continuous drain current
• ✓ 39 A pulsed drain current at TA = 25°C
• ✓ 2.4 nC typical total gate charge
• ✓ 0.6 nC typical gate-drain charge
• ✓ 0.9 nC typical gate-source charge
• ✓ Logic-level gate drive
• ✓ ±20 V gate-to-source voltage rating
• ✓ Low Qg and Qgd for reduced switching losses
• ✓ Low thermal resistance
• ✓ Avalanche rated
• ✓ Compact 2 mm × 2 mm WSON package
• ✓ 4 mm² package area
• ✓ Pb-free terminal plating
• ✓ RoHS compliant and halogen free
• ✓ -55°C to +150°C junction-temperature range
• ✓ Optimized for control FET applications
• ✓ Suitable for power conversion and load management