CSD18541F5, PICOSTAR-3, TI 60V N-Channel Power MOSFET Wholesale

• ✓ Large available stock for CSD18541F5
• ✓ Competitive wholesale pricing for volume orders
• ✓ 60 V N-channel MOSFET for compact switching applications
• ✓ Low RDS(on) for reduced conduction losses
• ✓ Low Qg and Qgd for efficient switching
• ✓ Ultra-small PICOSTAR footprint for space-constrained designs
• ✓ Support for bulk purchasing and production requirements
• ✓ Pre-shipment inspection and order coordination support

The CSD18541F5 is a 60-V N-channel NexFET™ power MOSFET from Texas Instruments. This single-MOSFET device uses a compact PICOSTAR package and is optimized for applications where both electrical performance and PCB footprint are important.

The device features a maximum RDS(on) of 65 mΩ at VGS = 10 V and 75 mΩ at VGS = 4.5 V. Typical RDS(on) values are 54 mΩ and 57 mΩ respectively. The low on-resistance helps reduce conduction losses in load-switching and general-purpose switching applications.

The CSD18541F5 has a typical total gate charge of 11 nC, with 1.6 nC typical gate-drain charge and 1.5 nC typical gate-source charge. These characteristics support efficient switching while helping control gate-drive requirements.

The MOSFET is rated for a continuous drain current of 2.2 A at TC = 25°C and a pulsed drain current of 21 A. It also includes integrated ESD protection and an ESD protection diode, providing additional robustness for compact power switching designs.

Its PICOSTAR (YJK) package measures approximately 1.53 mm × 0.77 mm with a 0.36-mm maximum profile. This ultra-small, leadless package is intended to reduce PCB area significantly compared with conventional discrete MOSFET packages.

The CSD18541F5 is optimized for industrial load-switch applications and general-purpose switching applications, particularly where board space is limited.

• ✓ 60 V N-channel NexFET™ power MOSFET
• ✓ Single MOSFET configuration
• ✓ 65 mΩ maximum RDS(on) at VGS = 10 V
• ✓ 75 mΩ maximum RDS(on) at VGS = 4.5 V
• ✓ 54 mΩ typical RDS(on) at VGS = 10 V
• ✓ 57 mΩ typical RDS(on) at VGS = 4.5 V
• ✓ 2.2 A continuous drain current at TC = 25°C
• ✓ 21 A pulsed drain current at TC = 25°C
• ✓ 11 nC typical total gate charge
• ✓ 1.6 nC typical gate-drain charge
• ✓ 1.5 nC typical gate-source charge
• ✓ ±20 V gate-to-source voltage rating
• ✓ Logic-level gate drive
• ✓ Integrated ESD protection
• ✓ Integrated ESD protection diode
• ✓ Avalanche-rated power MOSFET
• ✓ Ultra-small PICOSTAR package
• ✓ Approximately 1.53 mm × 0.77 mm footprint
• ✓ Low-profile 0.36 mm package height
• ✓ Lead and halogen free
• ✓ RoHS compliant
• ✓ Operating junction temperature from -55°C to +150°C
• ✓ Optimized for industrial load-switch applications
• ✓ Suitable for general-purpose switching applications
• ✓ Designed for highly space-constrained PCB designs