CSD25501F3, PICOSTAR-3, TI P-Channel Power MOSFET Wholesale
Description
Reviews
| Manufacturer | Texas Instruments (TI) |
|---|---|
| Part Number | CSD25501F3 |
| Product Status | ACTIVE / Catalog |
| Product Type | P-Channel NexFET™ Power MOSFET |
| Configuration | Single |
| Channel Type | P-Channel |
| Drain-to-Source Voltage (VDS) | -20 V |
| Gate-to-Source Voltage (VGS) | -20 V |
| RDS(on) at VGS = -4.5 V | 76 mΩ maximum |
| RDS(on) at VGS = -2.5 V | 125 mΩ maximum |
| Gate Threshold Voltage | -0.75 V typical |
| Continuous Drain Current | 3.6 A, silicon limited at TC = 25°C |
| Gate Charge (Qg) | 1.02 nC typical |
| Gate-Drain Charge (Qgd) | 0.09 nC typical |
| Gate-Source Charge (Qgs) | 0.45 nC typical |
| Logic Level | Yes |
| Integrated Gate ESD Protection | Yes |
| Integrated Gate Clamp Resistor | 10 kΩ typical |
| Internal Gate Oxide Maximum | -6 V |
| Operating Temperature | -55°C to +150°C |
| Package | PICOSTAR (YJN), 3 Pins |
| Package Type | Single LGA |
| Package Size | 0.70 mm × 0.60 mm |
| Maximum Package Height | 0.22 mm |
| Package Area | 0.414 mm² |
| Lead / Ball Material | NiAu |
| MSL Rating | Level-1-260C-UNLIM |
| RoHS | Yes |
| REACH | Yes |
| TI Standard Pack | 3,000 pcs / LARGE T&R |
| Available Stock | 1,720,000 pcs |
|---|---|
| Pricing | Competitive wholesale pricing based on order quantity |
| Packaging | PICOSTAR (YJN), 3-pin, Tape & Reel |
| TI Standard Pack Quantity | 3,000 pcs / LARGE T&R |
| Supply | Available for bulk and production-volume orders |
- ✓ Large available stock for CSD25501F3
- ✓ Competitive wholesale pricing for volume orders
- ✓ Compact P-channel power MOSFET for space-constrained designs
- ✓ Low RDS(on) for reduced conduction losses
- ✓ Low gate charge for efficient switching
- ✓ Support for bulk purchasing and production requirements
- ✓ Pre-shipment inspection and order coordination support
The CSD25501F3 is a -20 V P-channel NexFET™ power MOSFET from Texas Instruments. It uses a single PICOSTAR package and is designed to provide low conduction losses and low switching charge in extremely space-constrained electronic designs.
The device offers a maximum RDS(on) of 76 mΩ at VGS = -4.5 V and 125 mΩ at VGS = -2.5 V. With a silicon-limited continuous drain current rating of 3.6 A at TC = 25°C, the device provides useful current-handling capability while maintaining a very small PCB footprint.
The CSD25501F3 features ultra-low gate charge and gate-drain charge, with typical values of 1.02 nC and 0.09 nC respectively. These characteristics help reduce switching losses and make the MOSFET suitable for power-management and load-switching applications.
An integrated ESD protection diode and a 10 kΩ gate clamp resistor provide additional gate protection. The clamp resistor allows the gate voltage to operate above the internal gate-oxide limit of -6 V under appropriate duty-cycle conditions.
The PICOSTAR package measures approximately 0.7 mm × 0.6 mm with a maximum height of only 0.22 mm. This ultra-small footprint makes the CSD25501F3 suitable for handheld, mobile and other miniaturized electronic applications.
- ✓ -20 V P-channel NexFET™ power MOSFET
- ✓ Single MOSFET configuration
- ✓ 76 mΩ maximum RDS(on) at VGS = -4.5 V
- ✓ 125 mΩ maximum RDS(on) at VGS = -2.5 V
- ✓ 3.6 A silicon-limited drain current at TC = 25°C
- ✓ Ultra-low 1.02 nC typical total gate charge
- ✓ Ultra-low 0.09 nC typical gate-drain charge
- ✓ 0.45 nC typical gate-source charge
- ✓ Logic-level operation
- ✓ Integrated ESD protection diode
- ✓ Integrated 10 kΩ gate clamp resistor
- ✓ Ultra-small 0.7 mm × 0.6 mm footprint
- ✓ Maximum package height of only 0.22 mm
- ✓ PICOSTAR (YJN) 3-pin package
- ✓ Low-profile package for space-constrained PCB designs
- ✓ Lead and halogen free
- ✓ RoHS compliant
- ✓ Suitable for handheld and mobile electronics
- ✓ Suitable for load switching and compact power-management designs
- ✓ Operating temperature range of -55°C to +150°C
